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LED Materials (GaN, GaAs, etc.) and Equipment

HexaTech to Supply AlN Substrates for UV LED R & D at Osram Opto

HexaTech Inc. of Morrisville, North Carolina USA, reported that the firm signed two strategic agreements with Osram Opto Semiconductors GmbH, of Regensburg, Germany. The agreements include a long-term contract for HexaTech to supply its aluminum nitride (AlN) substrates, licensing of certain HexaTech intellectual property (IP), and support of HexaTech’s 2” …

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Osram Opto to Coordinate FLINGO Project

Osram Opto Semiconductors has announced the launch of the FLINGO project to develop new materials particularly layers and processes to improve the durability and efficiency of LEDs. The company will serve as project coordinator working with four partners from research and industry. Osram Opto Semiconductors says that it is collaborating …

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Development Points to Potential for 100-Fold Improvement in Nanopillar LED Efficiency

Researchers from Eindhoven University of Technology have created a very efficient nanopillar LED. The team fabricated the nanopillar LED with a metal cavity in a III-V layer stack attached to a silicon substrate. The device achieved “relatively high” on-chip external quantum efficiency (10−4 to 10−2 for room-temperature and 9.5 K, …

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Nanchang Kingsoon to Expand Capacity with Aixtron Systems

Aixtron reports that Nanchang Kingsoon, a recently founded Chinese manufacturer of optoelectronic devices, has ordered multiple of its MOCVD cluster tools to expand its manufacturing capacities for producing gallium arsenide-based red, orange and yellow (ROY) LEDs and solar cells. Aixtron says that it will deliver all of the systems in …

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UCSB Researchers Identify Atomic Defects that Reduce LED Efficiency

Researchers at UCSB have identified a specific type of defect in the atomic structure of an LED that results in less efficient performance. The researchers anticipate that the characterization such point defects could lead to the fabrication of more efficient and longer lasting LEDs. Chris Van de Walle, whose research …

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Plessey and Anvil Semiconductors Collaborate with 3C-SiC/Si Substrates to Overcome Green Gap

Plessey of Plymouth, England, Anvil Semiconductors and the University of Cambridge reported that they are collaborating on fabricating high-efficiency LEDs in cubic GaN grown on Anvil’s 3C-SiC / Si substrates. Plessey contends that cubic GaN has the potential to overcome the problems from the strong internal electric fields in LEDs, …

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Boston University Awarded $13 Million in Patent Infringement Case Against Three Major Taiwan LED Companies

Boston University received a favorable jury verdict in its LED patent infringement case against Taiwan LED companies Everlight Electronics Co., Ltd., and Lite-On Technology Corporation, and Epistar Corporation. A US District Court jury awarded Boston University over $13 million after finding that three companies infringed on a BU patent for …

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