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Plessey Semiconductor Awarded £1.3 million UK Government Grant for GaN-on-Si Development

Plessey Semiconductors has won £1.3 million grant for a UK government project that intends to expand its production of GaN-on-silicon LEDs at Plessey’s manufacturing site in Devon.  Plessey will work with Aixtron and Brucker on the project. The grant is part of the £67 million UK government investment in the Advanced Manufacturing Supply Chain Initiative (AMSCI), a funding competition intended to make UK manufacturing supply chains more competitive and encourage major new suppliers to relocate to the UK.

Keith Strickland, Plessey CTO, commented, “This project supports the work we have ongoing with Aixtron and Bruker to further increase the yield of our GaN-on-Silicon process. These improvements are required as part of our move to 200mm (8-inch) silicon substrates. A 200mm (8-inch) wafer has almost twice the usable area of our existing 150mm (6-inch) wafers and therefore will almost double the number of LEDs produced for the same relative cost.”

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